{"paper":{"title":"Shot noise of a multiwalled carbon nanotube field effect transistor","license":"","headline":"","cross_cats":[],"primary_cat":"cond-mat.mes-hall","authors_text":"D. Gunnarsson, F. Wu, P. J. Hakonen, R. Tarkiainen, T. H. Wang, T. Tsuneta","submitted_at":"2006-06-26T13:14:35Z","abstract_excerpt":"We have investigated shot noise in a 6-nm-diameter, semiconducting multiwalled carbon nanotube FET at 4.2 K over the frequency range 600 - 950 MHz. We find a transconductance of 3 - 3.5 $\\mu$S for optimal positive and negative source-drain voltages V. For the gate referred input voltage noise, we obtain 0.2 and 0.3 $\\mu{V}/ \\sqrt{Hz}$ for V>0 and V<0, respectively. As effective charge noise this corresponds to $2-3 \\cdot 10^{-5}$ e/$\\sqrt{Hz}$."},"claims":{"count":0,"items":[],"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"source":{"id":"cond-mat/0606661","kind":"arxiv","version":3},"verdict":{"id":null,"model_set":{},"created_at":null,"strongest_claim":"","one_line_summary":"","pipeline_version":null,"weakest_assumption":"","pith_extraction_headline":""},"references":{"count":0,"sample":[],"resolved_work":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57","internal_anchors":0},"formal_canon":{"evidence_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"author_claims":{"count":0,"strong_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"builder_version":"pith-number-builder-2026-05-17-v1"}