{"paper":{"title":"Controlling a three dimensional electron slab of graded Al$_{x}$Ga$_{1-x}$N","license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","headline":"","cross_cats":[],"primary_cat":"cond-mat.mes-hall","authors_text":"A. Bonanni, G. Capuzzo, R. Adhikari, Tian Li","submitted_at":"2015-07-03T14:44:02Z","abstract_excerpt":"Polarization induced degenerate $n$-type doping with electron concentrations up to $\\sim$10$^{20}$\\,cm$^{-3}$ is achieved in graded Al$_{x}$Ga$_{1-x}$N layers ($x$: 0\\%$\\rightarrow$37\\%) grown on unintentionally doped and on $n$-doped GaN:Si buffer/reservoir layers by metal organic vapor phase epitaxy. High resolution x-ray diffraction, transmission electron microscopy and electron energy loss spectroscopy confirm the gradient in the composition of the Al$_{x}$Ga$_{1-x}$N layers, while magnetotransport studies reveal the formation of a three dimensional electron slab, whose conductivity can be"},"claims":{"count":0,"items":[],"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"source":{"id":"1507.00927","kind":"arxiv","version":1},"verdict":{"id":null,"model_set":{},"created_at":null,"strongest_claim":"","one_line_summary":"","pipeline_version":null,"weakest_assumption":"","pith_extraction_headline":""},"references":{"count":0,"sample":[],"resolved_work":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57","internal_anchors":0},"formal_canon":{"evidence_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"author_claims":{"count":0,"strong_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"builder_version":"pith-number-builder-2026-05-17-v1"}