{"paper":{"title":"Probing limits of STM field emission patterned Si:P $\\delta$-doped devices","license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","headline":"","cross_cats":[],"primary_cat":"cond-mat.mes-hall","authors_text":"E. Bussmann, G. Subramania, G. Ten Eyck, J. Dominguez, M. P. Lilly, M. Rudolph, M. S. Carroll, S. M. Carr, T. Pluym","submitted_at":"2014-08-04T14:26:04Z","abstract_excerpt":"Recently, a single atom transistor was deterministically fabricated using phosphorus in Si by H-desorption lithography with a scanning tunneling microscope (STM). This milestone in precision, achieved by operating the STM in the conventional tunneling mode, typically utilizes very slow ($\\sim\\!10^2~\\mathrm{nm^2/s}$) patterning speeds. By contrast, using the STM in a high voltage ($>10~\\mathrm{V}$) field emission mode, patterning speeds can be increased by orders of magnitude to $\\gtrsim\\!10^4~\\mathrm{nm^2/s}$. We show that the rapid patterning negligibly affects the functionality of relatively"},"claims":{"count":0,"items":[],"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"source":{"id":"1408.0697","kind":"arxiv","version":1},"verdict":{"id":null,"model_set":{},"created_at":null,"strongest_claim":"","one_line_summary":"","pipeline_version":null,"weakest_assumption":"","pith_extraction_headline":""},"references":{"count":0,"sample":[],"resolved_work":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57","internal_anchors":0},"formal_canon":{"evidence_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"author_claims":{"count":0,"strong_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"builder_version":"pith-number-builder-2026-05-17-v1"}