{"paper":{"title":"Extreme magnetoresistance induced by Zeeman effect-driven electron-hole compensation and topological protection in MoSi$_2$","license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","headline":"","cross_cats":[],"primary_cat":"cond-mat.mtrl-sci","authors_text":"A. Thamizhavel, M. Matin, N. Barman, R. Mondal, S. K. Dhar","submitted_at":"2017-11-27T12:25:37Z","abstract_excerpt":"The magnetoresistance is the magnetic field induced change of electrical resistivity of a material. Recent studies have revealed extremely large magnetoresistance in several non-magnetic semimetals, which has been explained on the basis of either electron-hole compensation or the Fermi surface topology, or the combination of both. Here, we present a single crystal study on MoSi$_2$, which exhibits extremely large magnetoresistance, approaching almost 10$^7$ % at 2 K and 14 T magnetic field. It is found that the electron-hole compensation level in MoSi$_2$ evolves with magnetic field, which is "},"claims":{"count":0,"items":[],"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"source":{"id":"1711.09646","kind":"arxiv","version":1},"verdict":{"id":null,"model_set":{},"created_at":null,"strongest_claim":"","one_line_summary":"","pipeline_version":null,"weakest_assumption":"","pith_extraction_headline":""},"references":{"count":0,"sample":[],"resolved_work":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57","internal_anchors":0},"formal_canon":{"evidence_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"author_claims":{"count":0,"strong_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"builder_version":"pith-number-builder-2026-05-17-v1"}