{"paper":{"title":"Time resolution and dynamic range of field effect transistor based terahertz detectors","license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","headline":"","cross_cats":[],"primary_cat":"physics.app-ph","authors_text":"Bartlomiej Salski, Cezary Kolacinski, Dariusz Obrebski, Dmytro But, Jacek Marczewski, Michal Zaborowski, Pawel Kopyt, Przemyslaw Zagrajek, Sergey D. Ganichev, Sergey N. Danilov, Wojciech Knap","submitted_at":"2019-05-21T13:17:30Z","abstract_excerpt":"We studied time resolution and response power dependence of three terahertz detectors based on significantly different types of field effect transistors. We analyzed the photoresponse of custom-made Si junctionless FETs, Si MOSFETs and GaAs-based high electron mobility transistors detectors. Applying monochromatic radiation of high power, pulsed, line-tunable molecular THz laser, which operated at frequencies in the range from 0.6-3.3 THz, we demonstrated that all these detectors have at least nanosecond response time. We showed that detectors yield a linear response in a wide range of radiati"},"claims":{"count":0,"items":[],"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"source":{"id":"1905.08602","kind":"arxiv","version":1},"verdict":{"id":null,"model_set":{},"created_at":null,"strongest_claim":"","one_line_summary":"","pipeline_version":null,"weakest_assumption":"","pith_extraction_headline":""},"references":{"count":0,"sample":[],"resolved_work":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57","internal_anchors":0},"formal_canon":{"evidence_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"author_claims":{"count":0,"strong_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"builder_version":"pith-number-builder-2026-05-17-v1"}