{"paper":{"title":"Molecular-beam epitaxial growth of a far-infrared transparent electrode for extrinsic Germanium photoconductors","license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","headline":"","cross_cats":["astro-ph.IM"],"primary_cat":"cond-mat.mtrl-sci","authors_text":"Hidehiro Kaneda, Hironobu Makitsubo, Kazuyuki Hirose, Takehiko Wada, Toyoaki Suzuki","submitted_at":"2012-06-23T08:15:09Z","abstract_excerpt":"We have evaluated the optical and electrical properties of a far-infrared (IR) transparent electrode for extrinsic germanium (Ge) photoconductors at 4 K, which was fabricated by molecular beam epitaxy (MBE). As a far-IR transparent electrode, an aluminum (Al)-doped Ge layer is formed at well-optimized doping concentration and layer thickness in terms of the three requirements: high far-IR transmittance, low resistivity, and excellent ohmic contact. The Al-doped Ge layer has the far-IR transmittance of >95 % within the wavelength range of 40--200 microns, while low resistivity (~5 ohm-cm) and o"},"claims":{"count":0,"items":[],"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"source":{"id":"1206.5368","kind":"arxiv","version":1},"verdict":{"id":null,"model_set":{},"created_at":null,"strongest_claim":"","one_line_summary":"","pipeline_version":null,"weakest_assumption":"","pith_extraction_headline":""},"references":{"count":0,"sample":[],"resolved_work":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57","internal_anchors":0},"formal_canon":{"evidence_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"author_claims":{"count":0,"strong_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"builder_version":"pith-number-builder-2026-05-17-v1"}