{"paper":{"title":"Electron transport in a ferromagnetic/normal/ferromagnetic tunnel junction based on the surface of a topological insulator","license":"http://creativecommons.org/licenses/by/3.0/","headline":"","cross_cats":[],"primary_cat":"cond-mat.mes-hall","authors_text":"Jian-Hui Yuan, Jian-Jun Zhang, Yan Zhang, Ze Cheng","submitted_at":"2012-04-04T14:13:41Z","abstract_excerpt":"We theoretically study the electron transport properties in a ferromagnetic/normal/ferromagnetic tunnel junction, which is deposited on the top of a topological surface. The conductance at the parallel (\\textbf{P}) configuration can be much bigger than that at the antiparallel (\\textbf{AP}) configuration. Compared \\textbf{P} with \\textbf{AP} configuration, there exists a shift of phase which can be tuned by gate voltage. We find that the exchange field weakly affects the conductance of carriers for \\textbf{P} configuration but can dramatically suppress the conductance of carriers for \\textbf{A"},"claims":{"count":0,"items":[],"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"source":{"id":"1204.0956","kind":"arxiv","version":2},"verdict":{"id":null,"model_set":{},"created_at":null,"strongest_claim":"","one_line_summary":"","pipeline_version":null,"weakest_assumption":"","pith_extraction_headline":""},"references":{"count":0,"sample":[],"resolved_work":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57","internal_anchors":0},"formal_canon":{"evidence_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"author_claims":{"count":0,"strong_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"builder_version":"pith-number-builder-2026-05-17-v1"}