{"paper":{"title":"Electron-hole transport and photovoltaic effect in gated MoS2 Schottky junctions","license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","headline":"","cross_cats":["cond-mat.mes-hall"],"primary_cat":"cond-mat.mtrl-sci","authors_text":"Amy Y. Liu, Anthony K. Boyd, Makarand Paranjape, Marcio Fontana, Mohamed Rinzan, Paola Barbara, Tristan Deppe","submitted_at":"2012-06-26T21:31:06Z","abstract_excerpt":"Atomically thin MoS2 has recently emerged as a very attractive material for nanoscale optoelectronic devices. While n-type transport in MoS2 devices has been demonstrated, hole conduction has been more challenging. Here we show work-function engineering to be an effective approach for controlling the polarity of MoS2 devices. Gated multi-layer MoS2 transistors with Au source/drain contacts exhibit n-type operation, while those with Pd contacts are shown to have p-type behavior. Devices with one Au and one Pd contact exhibit asymmetric ambipolar behavior and diode characteristics over a wide ra"},"claims":{"count":0,"items":[],"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"source":{"id":"1206.6125","kind":"arxiv","version":2},"verdict":{"id":null,"model_set":{},"created_at":null,"strongest_claim":"","one_line_summary":"","pipeline_version":null,"weakest_assumption":"","pith_extraction_headline":""},"references":{"count":0,"sample":[],"resolved_work":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57","internal_anchors":0},"formal_canon":{"evidence_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"author_claims":{"count":0,"strong_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"builder_version":"pith-number-builder-2026-05-17-v1"}