{"paper":{"title":"The Conducting Channel at the LaAlO$_3$/SrTiO$_3$ Interface","license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","headline":"","cross_cats":["cond-mat.mtrl-sci"],"primary_cat":"cond-mat.str-el","authors_text":"A. Annadi, Ariando, J. M. D. Coey, M. Salluzzo, S. W. Zeng, T. Venkatesan, W. L. Tan, W. M. L\\\"u, X. P. Qiu, X. Renshaw Wang, Y. L. Zhao, Z. Huang, Z. Q. Liu","submitted_at":"2013-08-22T03:17:28Z","abstract_excerpt":"Localization of electrons in the two-dimensional electron gas at the LaAlO$_3$/SrTiO$_3$ interface is investigated by varying the channel thickness in order to establish the nature of the conducting channel. Layers of SrTiO$_3$ were grown on NdGaO$_3$ (110) substrates and capped with LaAlO$_3$. When the SrTiO$_3$ thickness is $\\leq 6$ unit cells, most electrons at the interface are localized, but when the number of SrTiO$_3$ layers is 8-16, the free carrier density approaches $3.3 \\times 10^{14}$ cm$^{-2}$, the value corresponding to charge transfer of 0.5 electron per unit cell at the interfa"},"claims":{"count":0,"items":[],"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"source":{"id":"1308.4755","kind":"arxiv","version":1},"verdict":{"id":null,"model_set":{},"created_at":null,"strongest_claim":"","one_line_summary":"","pipeline_version":null,"weakest_assumption":"","pith_extraction_headline":""},"references":{"count":0,"sample":[],"resolved_work":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57","internal_anchors":0},"formal_canon":{"evidence_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"author_claims":{"count":0,"strong_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"builder_version":"pith-number-builder-2026-05-17-v1"}