{"paper":{"title":"A conductive topological insulator with colossal spin Hall effect for ultra-low power spin-orbit-torque switching","license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","headline":"","cross_cats":[],"primary_cat":"cond-mat.mtrl-sci","authors_text":"Nguyen Huynh Duy Khang, Pham Nam Hai, Yugo Ueda","submitted_at":"2017-09-22T10:40:20Z","abstract_excerpt":"Spin-orbit-torque (SOT) switching using the spin Hall effect (SHE) in heavy metals and topological insulators (TIs) has great potential for ultra-low power magnetoresistive random-access memory (MRAM). To be competitive with conventional spin-transfer-torque (STT) switching, a pure spin current source with large spin Hall angle (${\\theta}_{SH}$ > 1) and high electrical conductivity (${\\sigma} > 10^5 {\\Omega}^{-1}m^{-1}$) is required. Here, we demonstrate such a pure spin current source: BiSb thin films with ${\\sigma}{\\sim}2.5*10^5 {\\Omega}^{-1}m^{-1}$, ${\\theta}_{SH}{\\sim}52$, and spin Hall co"},"claims":{"count":0,"items":[],"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"source":{"id":"1709.07684","kind":"arxiv","version":2},"verdict":{"id":null,"model_set":{},"created_at":null,"strongest_claim":"","one_line_summary":"","pipeline_version":null,"weakest_assumption":"","pith_extraction_headline":""},"references":{"count":0,"sample":[],"resolved_work":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57","internal_anchors":0},"formal_canon":{"evidence_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"author_claims":{"count":0,"strong_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"builder_version":"pith-number-builder-2026-05-17-v1"}