{"paper":{"title":"Machine-learning-identified two-dimensional van der Waals multiferroics for four-state nonvolatile memory","license":"http://creativecommons.org/licenses/by/4.0/","headline":"The AuCrP2S6 monolayer combines ferromagnetism and out-of-plane ferroelectricity with bulk photovoltaic readout to support four-state nonvolatile memory in one atomic layer.","cross_cats":[],"primary_cat":"cond-mat.mtrl-sci","authors_text":"Hao Jin, Tao Wang, Zhibin Tan","submitted_at":"2026-05-14T03:10:16Z","abstract_excerpt":"Two-dimensional (2D) van der Waals (vdW) multiferroics offer an attractive platform for four-state nonvolatile memory by combining switchable ferroelectric polarization and magnetization within a single material system. However, their development is hindered by the scarcity of synthesizable candidates and the lack of non-destructive readout schemes. Here, we combine machine-learning screening with first-principles calculations to explore the 2D vdW ABC$_2$X$_6$ family and identify a set of high-confidence multiferroic candidates. Among them, AuCrP$_2$S$_6$ monolayer emerges as a representative"},"claims":{"count":4,"items":[{"kind":"strongest_claim","text":"AuCrP2S6 monolayer emerges as a representative system with a ferromagnetic ground state, a sizable out-of-plane polarization of 7.46 pC/m, and a moderate ferroelectric switching barrier of ~130 meV/f.u. The nonlinear optical response mediated by the bulk photovoltaic effect provides a dual-channel probe of the ferroic orders.","source":"verdict.strongest_claim","status":"machine_extracted","claim_id":"C1","attestation":"unclaimed"},{"kind":"weakest_assumption","text":"The machine-learning model trained on the ABC2X6 family accurately ranks synthesizable multiferroic candidates, and the subsequent first-principles calculations correctly capture both the ground-state orders and the bulk photovoltaic effect response needed for non-destructive four-state readout.","source":"verdict.weakest_assumption","status":"machine_extracted","claim_id":"C2","attestation":"unclaimed"},{"kind":"one_line_summary","text":"Machine-learning screening identifies AuCrP2S6 monolayer as a 2D multiferroic with 7.46 pC/m polarization and ferromagnetic order whose bulk photovoltaic effect enables non-destructive four-state readout.","source":"verdict.one_line_summary","status":"machine_extracted","claim_id":"C3","attestation":"unclaimed"},{"kind":"headline","text":"The AuCrP2S6 monolayer combines ferromagnetism and out-of-plane ferroelectricity with bulk photovoltaic readout to support four-state nonvolatile memory in one atomic layer.","source":"verdict.pith_extraction.headline","status":"machine_extracted","claim_id":"C4","attestation":"unclaimed"}],"snapshot_sha256":"2b91ff04e8597322c86ebfa22e74da59b9db5b7e7e52bef85a57b9cfcc8b7ecd"},"source":{"id":"2605.14303","kind":"arxiv","version":1},"verdict":{"id":"851ab8c9-b126-44b4-8659-8f03ef678112","model_set":{"reader":"grok-4.3"},"created_at":"2026-05-15T02:39:49.234967Z","strongest_claim":"AuCrP2S6 monolayer emerges as a representative system with a ferromagnetic ground state, a sizable out-of-plane polarization of 7.46 pC/m, and a moderate ferroelectric switching barrier of ~130 meV/f.u. The nonlinear optical response mediated by the bulk photovoltaic effect provides a dual-channel probe of the ferroic orders.","one_line_summary":"Machine-learning screening identifies AuCrP2S6 monolayer as a 2D multiferroic with 7.46 pC/m polarization and ferromagnetic order whose bulk photovoltaic effect enables non-destructive four-state readout.","pipeline_version":"pith-pipeline@v0.9.0","weakest_assumption":"The machine-learning model trained on the ABC2X6 family accurately ranks synthesizable multiferroic candidates, and the subsequent first-principles calculations correctly capture both the ground-state orders and the bulk photovoltaic effect response needed for non-destructive four-state readout.","pith_extraction_headline":"The AuCrP2S6 monolayer combines ferromagnetism and out-of-plane ferroelectricity with bulk photovoltaic readout to support four-state nonvolatile memory in one atomic layer."},"references":{"count":12,"sample":[{"doi":"","year":2022,"title":"Two-dimensional CIPS-InSe van der Waals heterostructure ferroelectric field effect transistor for nonvolatile memory applications,","work_id":"4f2134bf-b4da-4c90-a325-8fb5a756e777","ref_index":1,"cited_arxiv_id":"","is_internal_anchor":false},{"doi":"","year":2025,"title":"2D ferroic materials for nonvolatile memory applications,","work_id":"1808926b-b42f-4c17-88f1-6955a1b67674","ref_index":2,"cited_arxiv_id":"","is_internal_anchor":false},{"doi":"","year":2023,"title":"Electrical and magnetic anisotropies in van der Waals multiferroic CuCrP2S6,","work_id":"3342b7c6-f5a9-4b5b-914f-4b714f2c5d92","ref_index":3,"cited_arxiv_id":"","is_internal_anchor":false},{"doi":"","year":2022,"title":"Evidence for a single-layer van der Waals multiferroic,","work_id":"d6d2c95f-0667-46c1-bb67-a6a69056964a","ref_index":4,"cited_arxiv_id":"","is_internal_anchor":false},{"doi":"","year":2024,"title":"Evidence for multiferroicity in single -layer CuCrSe2,","work_id":"e132de8a-b441-488e-95a4-e8b4362dbc3f","ref_index":5,"cited_arxiv_id":"","is_internal_anchor":false}],"resolved_work":12,"snapshot_sha256":"1e5174d8fd6c69a13dfb31832af0b016399b103d043608bc4051196e60c350b9","internal_anchors":0},"formal_canon":{"evidence_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"author_claims":{"count":0,"strong_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"builder_version":"pith-number-builder-2026-05-17-v1"}