{"paper":{"title":"Precision comparison of the quantum Hall effect in graphene and gallium arsenide","license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","headline":"","cross_cats":[],"primary_cat":"cond-mat.mes-hall","authors_text":"A. Tzalenchuk, J.M. Williams, N.E. Fletcher, R. Goebel, R. Yakimova, S. Kubatkin, S. Lara-Avila, T.J.B.M. Janssen, V.I. Fal'ko","submitted_at":"2012-02-14T10:40:55Z","abstract_excerpt":"The half-integer quantum Hall effect in epitaxial graphene is compared with high precision to the well known integer effect in a GaAs/AlGaAs heterostructure. We find no difference between the quantised resistance values within the relative standard uncertainty of our measurement of $8.7\\times 10^{-11}$. The result places new tighter limits on any possible correction terms to the simple relation $R_{\\rm K}=h/e^2$, and also demonstrates that epitaxial graphene samples are suitable for application as electrical resistance standards of the highest metrological quality. We discuss the characterisat"},"claims":{"count":0,"items":[],"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"source":{"id":"1202.2985","kind":"arxiv","version":1},"verdict":{"id":null,"model_set":{},"created_at":null,"strongest_claim":"","one_line_summary":"","pipeline_version":null,"weakest_assumption":"","pith_extraction_headline":""},"references":{"count":0,"sample":[],"resolved_work":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57","internal_anchors":0},"formal_canon":{"evidence_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"author_claims":{"count":0,"strong_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"builder_version":"pith-number-builder-2026-05-17-v1"}