{"paper":{"title":"Localized States and Quantum Spin Hall Effect in Si-Doped InAs/GaSb Quantum Wells","license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","headline":"","cross_cats":[],"primary_cat":"cond-mat.mes-hall","authors_text":"Chao-Xing Liu, Dong-Hui Xu, Fu-Chun Zhang, Jin-Hua Gao, Jin-Hua Sun, Yi Zhou","submitted_at":"2013-10-15T13:48:49Z","abstract_excerpt":"We study localized in-gap states and quantum spin Hall effect in Si-doped InAs/GaSb quantum wells. We propose a model describing donor and/or acceptor impurities to describe Si dopants. This model shows in-gap bound states and wide conductance plateau with the quantized value $2e^2/h$ in light dopant concentration, consistent with recent experiments by Du et al. We predict a conductance dip structure due to backward scattering in the region where the localization length $\\xi$ is comparable with the sample width $L_y$ but much smaller than the sample length $L_x$."},"claims":{"count":0,"items":[],"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"source":{"id":"1310.4051","kind":"arxiv","version":2},"verdict":{"id":null,"model_set":{},"created_at":null,"strongest_claim":"","one_line_summary":"","pipeline_version":null,"weakest_assumption":"","pith_extraction_headline":""},"references":{"count":0,"sample":[],"resolved_work":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57","internal_anchors":0},"formal_canon":{"evidence_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"author_claims":{"count":0,"strong_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"builder_version":"pith-number-builder-2026-05-17-v1"}