{"paper":{"title":"Rapid laser-induced photochemical conversion of sol-gel precursors to In2O3 layers and their application in thin-film transistors","license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","headline":"","cross_cats":[],"primary_cat":"cond-mat.mtrl-sci","authors_text":"D. C. Koutsogeorgis, I. Isakov, K. Tetzner, N. Kalfagiannis, S. Dellis, T. D. Anthopoulos","submitted_at":"2017-01-03T22:53:51Z","abstract_excerpt":"We report the development of indium oxide (In2O3) transistors via a single step laser-induced photochemical conversion process of a sol-gel metal oxide precursor. Through careful optimization of the laser annealing conditions we demonstrated successful conversion of the precursor to In2O3 and its subsequent implementation in n-channel transistors with electron mobility up to 13 cm2/Vs. Importantly, the process does not require thermal annealing making it compatible with temperature sensitive materials such as plastic. On the other hand, the spatial conversion/densification of the sol-gel layer"},"claims":{"count":0,"items":[],"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"source":{"id":"1701.00859","kind":"arxiv","version":1},"verdict":{"id":null,"model_set":{},"created_at":null,"strongest_claim":"","one_line_summary":"","pipeline_version":null,"weakest_assumption":"","pith_extraction_headline":""},"references":{"count":0,"sample":[],"resolved_work":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57","internal_anchors":0},"formal_canon":{"evidence_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"author_claims":{"count":0,"strong_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"builder_version":"pith-number-builder-2026-05-17-v1"}