{"paper":{"title":"Computing with spins and magnets","license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","headline":"","cross_cats":["cond-mat.mtrl-sci"],"primary_cat":"cond-mat.mes-hall","authors_text":"Behtash Behin-Aein, Jian-Ping Wang, Roland Wiesendanger","submitted_at":"2014-11-25T18:42:13Z","abstract_excerpt":"The possible use of spin and magnets in place of charge and capacitors to store and process information is well known. Magnetic tunnel junctions are being widely investigated and developed for magnetic random access memories. These are two terminal devices that change their resistance based on switchable magnetization of magnetic materials. They utilize the interaction between electron spin and magnets to read information from the magnets and write onto them. Such advances in memory devices could also translate into a new class of logic devices that offer the advantage of nonvolatile and recon"},"claims":{"count":0,"items":[],"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"source":{"id":"1411.6960","kind":"arxiv","version":1},"verdict":{"id":null,"model_set":{},"created_at":null,"strongest_claim":"","one_line_summary":"","pipeline_version":null,"weakest_assumption":"","pith_extraction_headline":""},"references":{"count":0,"sample":[],"resolved_work":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57","internal_anchors":0},"formal_canon":{"evidence_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"author_claims":{"count":0,"strong_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"builder_version":"pith-number-builder-2026-05-17-v1"}