{"paper":{"title":"Contactless Probing of the Intrinsic Carrier Transport in Single-Walled Carbon Nanotubes","license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","headline":"","cross_cats":["cond-mat.mtrl-sci"],"primary_cat":"cond-mat.mes-hall","authors_text":"Jia Liu, Jie Zhang, Jinhua Cai, Jun Ge, Liwei Chen, Wei Lu, Yize Stephanie Li","submitted_at":"2014-08-21T07:22:48Z","abstract_excerpt":"Intrinsic carrier transport properties of single-walled carbon nanotubes are probed by two parallel methods on the same individual tubes: the contactless dielectric force microscopy (DFM) technique and the conventional field-effect transistor (FET) method. The dielectric responses of SWNTs are strongly correlated with electronic transport of the corresponding FETs. The DC bias voltage in DFM plays a role analogous to the gate voltage in FET. A microscopic model based on the general continuity equation and numerical simulation is built to reveal the link between intrinsic properties such as car"},"claims":{"count":0,"items":[],"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"source":{"id":"1408.5184","kind":"arxiv","version":1},"verdict":{"id":null,"model_set":{},"created_at":null,"strongest_claim":"","one_line_summary":"","pipeline_version":null,"weakest_assumption":"","pith_extraction_headline":""},"references":{"count":0,"sample":[],"resolved_work":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57","internal_anchors":0},"formal_canon":{"evidence_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"author_claims":{"count":0,"strong_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"builder_version":"pith-number-builder-2026-05-17-v1"}