{"paper":{"title":"Attack resilient architecture to replace embedded Flash with STTRAM in homogeneous IoTs","license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","headline":"","cross_cats":[],"primary_cat":"cs.ET","authors_text":"Asmit De, Mohammad Nasim Imtiaz Khan, Swaroop Ghosh","submitted_at":"2016-06-01T21:00:08Z","abstract_excerpt":"Spin-Transfer Torque RAM (STTRAM) is an emerging Non-Volatile Memory (NVM) technology that provides better endurance, write energy and performance than traditional NVM technologies such as Flash. In embedded application such as microcontroller SoC of Internet of Things (IoT), embedded Flash (eFlash) is widely employed. However, eFlash is also associated with cost. Therefore, replacing eFlash with STTRAM is desirable in IoTs for power-efficiency. Although promising, STTRAM brings several new security and privacy challenges that pose a significant threat to sensitive data in memory. This is inev"},"claims":{"count":0,"items":[],"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"source":{"id":"1606.00467","kind":"arxiv","version":1},"verdict":{"id":null,"model_set":{},"created_at":null,"strongest_claim":"","one_line_summary":"","pipeline_version":null,"weakest_assumption":"","pith_extraction_headline":""},"references":{"count":0,"sample":[],"resolved_work":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57","internal_anchors":0},"formal_canon":{"evidence_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"author_claims":{"count":0,"strong_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"builder_version":"pith-number-builder-2026-05-17-v1"}