{"paper":{"title":"Electrical spin injection from ferromagnet into an InAs heterostructures through MgO tunnel barrier","license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","headline":"","cross_cats":["cond-mat.mtrl-sci"],"primary_cat":"cond-mat.mes-hall","authors_text":"Kanji Yoh, K. Konishi, L-K. Liefeith, T. Ishikura, Z. Cui","submitted_at":"2013-04-05T10:39:48Z","abstract_excerpt":"We have investigated electrical spin injection from Ni81Fe19 into an InAs quantum well through MgO tunneling barrier for potential application to InAs-based spin field effect transistor. Injected spin polarized current were detected in both nonlocal and local spin valve set-ups and the spin diffusion length and spin injection efficiency were analyzed. The spin diffusion length was estimated to be 1.6 {\\mu}m in nonlocal set-up at 1.4 K. The spin polarization of Ni81Fe19/MgO/InAs as-deposited sample was relealed to be 6.9 %, while increased spin polarization of 8.9 % was observed by additional t"},"claims":{"count":0,"items":[],"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"source":{"id":"1304.1671","kind":"arxiv","version":1},"verdict":{"id":null,"model_set":{},"created_at":null,"strongest_claim":"","one_line_summary":"","pipeline_version":null,"weakest_assumption":"","pith_extraction_headline":""},"references":{"count":0,"sample":[],"resolved_work":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57","internal_anchors":0},"formal_canon":{"evidence_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"author_claims":{"count":0,"strong_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"builder_version":"pith-number-builder-2026-05-17-v1"}