{"paper":{"title":"Monolithic axial InGaAs quantum dot emitters in GaAs-based nanowires via Sb-mediated facet engineering","license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","headline":"Dilute antimony incorporation suppresses rotational twins to enable abrupt axial InGaAs quantum dots in GaAs nanowires.","cross_cats":["cond-mat.mes-hall","cond-mat.mtrl-sci"],"primary_cat":"physics.app-ph","authors_text":"Aris Koulas-Simos, Chirag C. Palekar, Gregor Koblm\\\"uller, Hyowon W. Jeong, Imad Limame, Jonathan J. Finley, Markus D\\\"oblinger, Sang Kyu Kim, Stephan Reitzenstein","submitted_at":"2026-05-13T18:05:00Z","abstract_excerpt":"GaAs-based nanowires hosting active quantum heterostructures provide a promising route toward monolithic integration of single-photon sources on silicon, a key requirement for scalable quantum photonics. However, ultrathin axial quantum-emitter formation is often hindered by facet-dependent growth dynamics and rotational twins, which induce lateral overgrowth and compromise interface abruptness. Here, we develop InGaAs-based quantum emitters by tailoring facet evolution via dilute Sb incorporation, which efficiently suppresses twins and promotes confined axial insertion at the growth-front fac"},"claims":{"count":4,"items":[{"kind":"strongest_claim","text":"These results establish a strong correlation between twin density and axial heterostructure formation, identifying defect control as a key factor in realizing monolithically integrated nanowire single-photon sources.","source":"verdict.strongest_claim","status":"machine_extracted","claim_id":"C1","attestation":"unclaimed"},{"kind":"weakest_assumption","text":"That the observed improvement in axial QD formation is caused primarily by Sb-mediated suppression of rotational twins rather than other uncontrolled growth parameters, an assumption stated in the abstract but not quantified with systematic controls or growth models.","source":"verdict.weakest_assumption","status":"machine_extracted","claim_id":"C2","attestation":"unclaimed"},{"kind":"one_line_summary","text":"Dilute antimony incorporation during nanowire growth suppresses rotational twins and enables abrupt axial InGaAs quantum dots with single-photon emission.","source":"verdict.one_line_summary","status":"machine_extracted","claim_id":"C3","attestation":"unclaimed"},{"kind":"headline","text":"Dilute antimony incorporation suppresses rotational twins to enable abrupt axial InGaAs quantum dots in GaAs nanowires.","source":"verdict.pith_extraction.headline","status":"machine_extracted","claim_id":"C4","attestation":"unclaimed"}],"snapshot_sha256":"6e35a7814107a651cd45f6f8cfd516cde7123c8e65fcf7e898b7d34d35b31662"},"source":{"id":"2605.13992","kind":"arxiv","version":1},"verdict":{"id":"7424fa50-e5c0-4b36-afe8-f3a702d19649","model_set":{"reader":"grok-4.3"},"created_at":"2026-05-15T02:38:23.406664Z","strongest_claim":"These results establish a strong correlation between twin density and axial heterostructure formation, identifying defect control as a key factor in realizing monolithically integrated nanowire single-photon sources.","one_line_summary":"Dilute antimony incorporation during nanowire growth suppresses rotational twins and enables abrupt axial InGaAs quantum dots with single-photon emission.","pipeline_version":"pith-pipeline@v0.9.0","weakest_assumption":"That the observed improvement in axial QD formation is caused primarily by Sb-mediated suppression of rotational twins rather than other uncontrolled growth parameters, an assumption stated in the abstract but not quantified with systematic controls or growth models.","pith_extraction_headline":"Dilute antimony incorporation suppresses rotational twins to enable abrupt axial InGaAs quantum dots in GaAs nanowires."},"references":{"count":11,"sample":[{"doi":"","year":2020,"title":"Ruhstorfer, D.; Mejia, S.; Ramsteiner, M.; Döblinger, M.; Riedl, H.; Finley, J. J.; Koblmüller, G. Demonstration of n -type behavior in catalyst -free Si -doped GaAs nanowires grown by molecular beam ","work_id":"2899f36a-1c7c-4416-94f1-3b568730528f","ref_index":1,"cited_arxiv_id":"","is_internal_anchor":false},{"doi":"","year":2021,"title":"Ruhstorfer, D.; Lang, A.; Matich, S.; Döblinger, M.; Riedl, H.; Finley, J. J.; Koblmüller, G. Growth dynamics and compositional structure in periodic InAsSb nanowire arrays on Si (111) grown by select","work_id":"3dbb233a-d950-4f23-ba20-9e12a62f4171","ref_index":2,"cited_arxiv_id":"","is_internal_anchor":false},{"doi":"","year":2022,"title":"Ajay, A.; Jeong, H.; Schreitmüller, T.; Döblinger, M.; Ruhstorfer, D.; Mukhundhan, N.; Koolen, P. A. L. M.; Finley, J. J.; Koblmüller, G. Enhanced growth and properties of non - catalytic GaAs nanowir","work_id":"67101ee5-e526-4355-b0a2-fd9c3a6d036b","ref_index":3,"cited_arxiv_id":"","is_internal_anchor":false},{"doi":"","year":2023,"title":"Jeong, H. W.; Ajay, A.; Yu, H.; Döblinger, M.; Mukhundhan, N.; Finley, J. J.; Koblmüller, G. Sb -mediated tuning of growth - and exciton dynamics in entirely catalyst -free GaAsSb nanowires. Small 202","work_id":"9a560826-e937-4924-b63c-c2b1c14564e9","ref_index":4,"cited_arxiv_id":"","is_internal_anchor":false},{"doi":"","year":2024,"title":"Jeong, H. W.; Ajay, A.; Döblinger, M.; Sturm, S.; Gómez Ruiz, M.; Zell, R.; Mukhundhan, N.; Stelzner, D.; Lähnemann, J.; Müller -Caspary, K.; Finley, J. J.; Koblmüller, G. Axial growth characteristics","work_id":"d34a6fe3-5835-42dc-81d5-ac410bdda315","ref_index":5,"cited_arxiv_id":"","is_internal_anchor":false}],"resolved_work":11,"snapshot_sha256":"1442d9ff7bc387b78a4217fb9b8415a1f041e8afa04177a241d81d19cdfe9e48","internal_anchors":0},"formal_canon":{"evidence_count":1,"snapshot_sha256":"c9fd0afa6dceb8d72d2bb6f9af6d1594a17f728efa7d6352c21b8c553588b1a6"},"author_claims":{"count":0,"strong_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"builder_version":"pith-number-builder-2026-05-17-v1"}