{"paper":{"title":"Dependence of carrier doping on the impurity potential in transition-metal-substituted FeAs-based superconductors","license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","headline":"","cross_cats":[],"primary_cat":"cond-mat.supr-con","authors_text":"A. Fujimori, A. Iyo, C. H. Lee, H. Eisaki, I. Nishi, K. Kihou, K. Ono, M. Nakajima, R. Arita, S. Ideta, S. Uchida, S. Yamaichi, T. Ito, T. Sasagawa, T. Yoshida, Y. Kotani, Y. Nakashima, Y. Tomioka","submitted_at":"2012-05-09T07:34:47Z","abstract_excerpt":"In order to examine to what extent the rigid-band-like electron doping scenario is applicable to the transition metal-substituted Fe-based superconductors, we have performed angle-resolved photoemission spectroscopy studies of Ba(Fe$_{1-x}$Ni$_{x}$)$_2$As$_2$ (Ni-122) and Ba(Fe$_{1-x}$Cu$_{x}$)$_2$As$_2$ (Cu-122), and compared the results with Ba(Fe$_{1-x}$Co$_x$)$_2$As$_2$ (Co-122). We find that Ni 3$\\it{d}$-derived features are formed below the Fe 3$\\it{d}$ band and that Cu 3$\\it{d}$-derived ones further below it. The electron and hole Fermi surface (FS) volumes are found to increase and dec"},"claims":{"count":0,"items":[],"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"source":{"id":"1205.1889","kind":"arxiv","version":4},"verdict":{"id":null,"model_set":{},"created_at":null,"strongest_claim":"","one_line_summary":"","pipeline_version":null,"weakest_assumption":"","pith_extraction_headline":""},"references":{"count":0,"sample":[],"resolved_work":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57","internal_anchors":0},"formal_canon":{"evidence_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"author_claims":{"count":0,"strong_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"builder_version":"pith-number-builder-2026-05-17-v1"}