{"paper":{"title":"Spin Transistor and Quantum Spin Hall Effects in CdBxF2-x - p-CdF2 - CdBxF2-x Sandwich Nanostructures","license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","headline":"","cross_cats":["cond-mat.supr-con"],"primary_cat":"cond-mat.mes-hall","authors_text":"A.A. Kudryavtsev, A.I. Ryskin, A.M. Malyarenko, A.S. Shcheulin, I.A. Shelykh, L.E. Klyachkin, N.T. Bagraev, O.N. Guimbitskaya, V.V.Romanov","submitted_at":"2009-10-20T13:48:30Z","abstract_excerpt":"Planar CdBxF2-x - p-CdF2 - CdBxF2-x sandwich nanostructures prepared on the surface of the n-type CdF2 bulk crystal are studied to register the spin transistor and quantum spin Hall effects. The current-voltage characteristics of the ultra-shallow p+-n junctions verify the CdF2 gap, 7.8 eV, and the quantum subbands of the 2D holes in the p-type CdF2 quantum well confined by the CdBxF2-x delta-barriers. The temperature and magnetic field dependencies of the resistance, specific heat and magnetic susceptibility demonstrate the high temperature superconductor properties for the CdBxF2-x delta-bar"},"claims":{"count":0,"items":[],"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"source":{"id":"0910.3846","kind":"arxiv","version":1},"verdict":{"id":null,"model_set":{},"created_at":null,"strongest_claim":"","one_line_summary":"","pipeline_version":null,"weakest_assumption":"","pith_extraction_headline":""},"references":{"count":0,"sample":[],"resolved_work":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57","internal_anchors":0},"formal_canon":{"evidence_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"author_claims":{"count":0,"strong_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"builder_version":"pith-number-builder-2026-05-17-v1"}