{"paper":{"title":"Carrier dynamics in site- and structure-controlled InGaN/GaN quantum dots","license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","headline":"","cross_cats":[],"primary_cat":"cond-mat.mes-hall","authors_text":"Brandon Demory, Chu-Hsiang Teng, Hui Deng, Lei Zhang, Pei-Cheng Ku, Tyler A. Hill","submitted_at":"2013-09-16T19:49:20Z","abstract_excerpt":"We report on the carrier dynamics in InGaN/GaN disk-in-a-wire quantum dots with precisely controlled location and structural parameters, including diameter, thickness and material composition. We measured the time-integrated and time-resolved spectra and the second-order correlation function of the photoluminescence from quantum dots with diameters ranging from 19 nm to 33 nm at temperatures of 10 K to 120 K. The influence of the small fluctuations in structural parameters, most importantly the quantum dot thickness, on the optical properties are also investigated through statistical correlati"},"claims":{"count":0,"items":[],"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"source":{"id":"1309.4081","kind":"arxiv","version":2},"verdict":{"id":null,"model_set":{},"created_at":null,"strongest_claim":"","one_line_summary":"","pipeline_version":null,"weakest_assumption":"","pith_extraction_headline":""},"references":{"count":0,"sample":[],"resolved_work":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57","internal_anchors":0},"formal_canon":{"evidence_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"author_claims":{"count":0,"strong_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"builder_version":"pith-number-builder-2026-05-17-v1"}