{"paper":{"title":"Quantifying Temperature-dependent Substrate Loss in GaN-on-Si RF Technology","license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","headline":"","cross_cats":[],"primary_cat":"physics.app-ph","authors_text":"Abdalla Eblabla, Hareesh Chandrasekar, Hassan Hirshy, James W. Pomeroy, Khaled Elgaid, Martin Kuball, Michael A. Casbon, Michael J. Uren, Paul J. Tasker","submitted_at":"2019-01-28T05:18:59Z","abstract_excerpt":"Intrinsic limits to temperature-dependent substrate loss for GaN-on-Si technology, due to the change in resistivity of the substrate with temperature, are evaluated using an experimentally validated device simulation framework. Effect of room temperature substrate resistivity on temperature-dependent CPW line loss at various operating frequency bands are then presented. CPW lines for GaN-on-high resistivity Si are shown to have a pronounced temperature-dependence for temperatures above 150{\\deg}C and have lower substrate losses for frequencies above the X-band. On the other hand, GaN-on-low re"},"claims":{"count":0,"items":[],"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"source":{"id":"1901.09521","kind":"arxiv","version":1},"verdict":{"id":null,"model_set":{},"created_at":null,"strongest_claim":"","one_line_summary":"","pipeline_version":null,"weakest_assumption":"","pith_extraction_headline":""},"references":{"count":0,"sample":[],"resolved_work":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57","internal_anchors":0},"formal_canon":{"evidence_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"author_claims":{"count":0,"strong_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"builder_version":"pith-number-builder-2026-05-17-v1"}