{"paper":{"title":"Comparison of 35 and 50 {\\mu}m thin HPK UFSD after neutron irradiation up to 6*10^15 neq/cm^2","license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","headline":"","cross_cats":["hep-ex"],"primary_cat":"physics.ins-det","authors_text":"A. Goto, A. Seiden V. Cindro, C. Gee, E. Estrada, F. McKinney-Martinez, G. Kramberger, H. F.-W. Sadrozinski, I. Mandi\\'c, M. Miku\\v{z}, M. Zavrtanik, N. Cartiglia, R. Rodriguez, S. M. Mazza, Y. Zhao, Z. Galloway, Z. Luce","submitted_at":"2018-03-05T22:41:44Z","abstract_excerpt":"We report results from the testing of 35 {\\mu}m thick Ultra-Fast Silicon Detectors (UFSD produced by Hamamatsu Photonics (HPK), Japan and the comparison of these new results to data reported before on 50 {\\mu}m thick UFSD produced by HPK. The 35 {\\mu}m thick sensors were irradiated with neutrons to fluences of 0, 1*10^14, 1*10^15, 3*10^15, 6*10^15 neq/cm^2. The sensors were tested pre-irradiation and post-irradiation with minimum ionizing particles (MIPs) from a 90Sr \\b{eta}-source. The leakage current, capacitance, internal gain and the timing resolution were measured as a function of bias vo"},"claims":{"count":0,"items":[],"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"source":{"id":"1803.02690","kind":"arxiv","version":1},"verdict":{"id":null,"model_set":{},"created_at":null,"strongest_claim":"","one_line_summary":"","pipeline_version":null,"weakest_assumption":"","pith_extraction_headline":""},"references":{"count":0,"sample":[],"resolved_work":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57","internal_anchors":0},"formal_canon":{"evidence_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"author_claims":{"count":0,"strong_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"builder_version":"pith-number-builder-2026-05-17-v1"}