{"paper":{"title":"Theory of Andreev reflection in a junction with a strongly disordered semiconductor","license":"","headline":"","cross_cats":[],"primary_cat":"cond-mat","authors_text":"I.L. Aleiner, L.I. Glazman, Penny Clarke","submitted_at":"1996-01-23T05:11:07Z","abstract_excerpt":"We study the conduction of a {\\sl N~-~Sm~-~S} junction, where {\\sl Sm} is a strongly disordered semiconductor. The differential conductance $dI/dV$ of this {\\sl N~-~Sm~-~S} structure is predicted to have a sharp peak at $V=0$. Unlike the case of a weakly disordered system, this feature persists even in the absence of an additional (Schottky) barrier on the boundary. The zero-bias conductance of such a junction $G_{NS}$ is smaller only by a numerical factor than the conductance in the normal state $G_N$. Implications for experiments on gated heterostructures with superconducting leads are discu"},"claims":{"count":0,"items":[],"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"source":{"id":"cond-mat/9601099","kind":"arxiv","version":1},"verdict":{"id":null,"model_set":{},"created_at":null,"strongest_claim":"","one_line_summary":"","pipeline_version":null,"weakest_assumption":"","pith_extraction_headline":""},"integrity":{"clean":true,"summary":{"advisory":0,"critical":0,"by_detector":{},"informational":0},"endpoint":"/pith/cond-mat/9601099/integrity.json","findings":[],"available":true,"detectors_run":[],"snapshot_sha256":"c28c3603d3b5d939e8dc4c7e95fa8dfce3d595e45f758748cecf8e644a296938"},"references":{"count":0,"sample":[],"resolved_work":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57","internal_anchors":0},"formal_canon":{"evidence_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"author_claims":{"count":0,"strong_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"builder_version":"pith-number-builder-2026-05-17-v1"}