{"paper":{"title":"Quantum transport properties of industrial $^{28}$Si/$^{28}$SiO$_2$","license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","headline":"","cross_cats":[],"primary_cat":"cond-mat.mes-hall","authors_text":"A. Budrevich, D. Donelson, D. Merrill, D. Sabbagh, G. Droulers, G. Scappucci, H. C. George, H. G. J. Eenink, J. Boter, J. Roberts, J. S. Clarke, J. Torres, K. Singh, L. Lampert, L. Massa, L. M. K. Vandersypen, L. Ross, M. Robinson, M. van Hezel, M. Veldhorst, N. Thomas, P. Amin, R. Pillarisetty, S. Amitonov","submitted_at":"2018-10-15T17:12:49Z","abstract_excerpt":"We investigate the structural and quantum transport properties of isotopically enriched $^{28}$Si/$^{28}$SiO$_2$ stacks deposited on 300 mm Si wafers in an industrial CMOS fab. Highly uniform films are obtained with an isotopic purity greater than 99.92\\%. Hall-bar transistors with an equivalent oxide thickness of 17 nm are fabricated in an academic cleanroom. A critical density for conduction of $1.75\\times10^{11}$ cm$^{-2}$ and a peak mobility of 9800 cm$^2$/Vs are measured at a temperature of 1.7 K. The $^{28}$Si/$^{28}$SiO$_2$ interface is characterized by a roughness of $\\Delta=0.4$ nm an"},"claims":{"count":0,"items":[],"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"source":{"id":"1810.06521","kind":"arxiv","version":2},"verdict":{"id":null,"model_set":{},"created_at":null,"strongest_claim":"","one_line_summary":"","pipeline_version":null,"weakest_assumption":"","pith_extraction_headline":""},"references":{"count":0,"sample":[],"resolved_work":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57","internal_anchors":0},"formal_canon":{"evidence_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"author_claims":{"count":0,"strong_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"builder_version":"pith-number-builder-2026-05-17-v1"}