{"paper":{"title":"Nonequilibrium spin fluctuations in single-electron transistors","license":"","headline":"","cross_cats":[],"primary_cat":"cond-mat.mes-hall","authors_text":"Gerd Sch\\\"on, Jan Martinek, J\\'ozef Barnas, Saburo Takahashi, Sadamichi Maekawa","submitted_at":"2002-09-24T14:07:18Z","abstract_excerpt":"We show that nonequilibrium spin fluctuations significantly influence the electronic transport in a single-electron transistor, when the spin relaxation on the island is slow compared to other relaxation processes, and when size effects play a role. To describe spin fluctuations we generalize the `orthodox' tunneling theory to take into account the electron spin, and show that the transition between consecutive charge states can occur via a high-spin state. This significantly modifies the shape of Coulomb steps and gives rise to additional resonances at low temperatures. Recently some of our p"},"claims":{"count":0,"items":[],"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"source":{"id":"cond-mat/0209559","kind":"arxiv","version":1},"verdict":{"id":null,"model_set":{},"created_at":null,"strongest_claim":"","one_line_summary":"","pipeline_version":null,"weakest_assumption":"","pith_extraction_headline":""},"references":{"count":0,"sample":[],"resolved_work":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57","internal_anchors":0},"formal_canon":{"evidence_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"author_claims":{"count":0,"strong_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"builder_version":"pith-number-builder-2026-05-17-v1"}