{"paper":{"title":"Disentangling surface and bulk transport in topological-insulator $p$-$n$ junctions","license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","headline":"","cross_cats":[],"primary_cat":"cond-mat.mes-hall","authors_text":"D. A. Ritchie, D. Backes, D. Gr\\\"utzmacher, D. Huang, G. Gumbs, G. Mussler, J. Kampmeier, M. Lanius, R. Mansell, V. Narayan","submitted_at":"2016-05-22T13:31:40Z","abstract_excerpt":"By combining $n$-type $\\mathrm{Bi_2Te_3}$ and $p$-type $\\mathrm{Sb_2Te_3}$ topological insulators, vertically stacked $p$-$n$ junctions can be formed, allowing to position the Fermi level into the bulk band gap and also tune between $n$- and $p$-type surface carriers. Here we use low-temperature magnetotransport measurements to probe the surface and bulk transport modes in a range of vertical $\\mathrm{Bi_2Te_3/Sb_2Te_3}$ heterostructures with varying relative thicknesses of the top and bottom layers. With increasing thickness of the $\\mathrm{Sb_2Te_3}$ layer we observe a change from $n$- to $p"},"claims":{"count":0,"items":[],"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"source":{"id":"1605.06787","kind":"arxiv","version":2},"verdict":{"id":null,"model_set":{},"created_at":null,"strongest_claim":"","one_line_summary":"","pipeline_version":null,"weakest_assumption":"","pith_extraction_headline":""},"references":{"count":0,"sample":[],"resolved_work":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57","internal_anchors":0},"formal_canon":{"evidence_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"author_claims":{"count":0,"strong_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"builder_version":"pith-number-builder-2026-05-17-v1"}