{"paper":{"title":"Experiments and Modeling of Mass Transport Phenomena in SiGe Devices","license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","headline":"","cross_cats":[],"primary_cat":"cond-mat.mtrl-sci","authors_text":"Guangrui (Maggie) Xia","submitted_at":"2018-09-26T13:37:38Z","abstract_excerpt":"Recent experiments and continuum modeling work on dopant diffusion and segregation, Si-Ge interdiffusion, and defect engineering in SiGe material systems are reviewed. Doping impact on Ge thin film quality and interdiffusion is also discussed. These are relevant to SiGe-based semiconductor devices including SiGe hetero-junction bipolar transistors, metal-oxidesemiconductor field-effect transistors, and Ge-on-Si based photonic devices."},"claims":{"count":0,"items":[],"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"source":{"id":"1809.09985","kind":"arxiv","version":1},"verdict":{"id":null,"model_set":{},"created_at":null,"strongest_claim":"","one_line_summary":"","pipeline_version":null,"weakest_assumption":"","pith_extraction_headline":""},"references":{"count":0,"sample":[],"resolved_work":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57","internal_anchors":0},"formal_canon":{"evidence_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"author_claims":{"count":0,"strong_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"builder_version":"pith-number-builder-2026-05-17-v1"}