{"paper":{"title":"Electronic and transport properties of the Mn-doped topological insulator Bi$_{2}$Te$_{3}$: A first-principles study","license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","headline":"","cross_cats":[],"primary_cat":"cond-mat.mtrl-sci","authors_text":"F. M\\'aca, I. Turek, J. Honolka, J. Kudrnovsk\\'y, K. Carva, P. Bal\\'a\\v{z}, V. Drchal, V. Hol\\'y, V. Sechovsk\\'y, V. Tk\\'a\\v{c}","submitted_at":"2016-03-29T15:25:03Z","abstract_excerpt":"We present a first-principles study of the electronic, magnetic, and transport properties of the topological insulator Bi$_{2}$Te$_{3}$ doped with Mn atoms in substitutional (Mn$_{\\rm Bi}$) and interstitial van der Waals gap positions (Mn$_{\\rm i}$), which act as acceptors and donors, respectively. The effect of native Bi$_{\\rm Te}$- and Te$_{\\rm Bi}$-antisite defects and their influence on calculated electronic transport properties is also investigated. We have studied four models representing typical cases, namely (i) Bi$_{2}$Te$_{3}$ with and without native defects, (ii) Mn$_{\\rm Bi}$ defec"},"claims":{"count":0,"items":[],"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"source":{"id":"1603.08811","kind":"arxiv","version":2},"verdict":{"id":null,"model_set":{},"created_at":null,"strongest_claim":"","one_line_summary":"","pipeline_version":null,"weakest_assumption":"","pith_extraction_headline":""},"references":{"count":0,"sample":[],"resolved_work":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57","internal_anchors":0},"formal_canon":{"evidence_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"author_claims":{"count":0,"strong_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"builder_version":"pith-number-builder-2026-05-17-v1"}