{"paper":{"title":"Modelling the Impact of Device Imperfections on Electron Shuttling in SiMOS devices","license":"http://creativecommons.org/licenses/by/4.0/","headline":"Raising confinement in SiMOS devices restores reliable conveyor-belt electron shuttling despite fabrication imperfections.","cross_cats":["cond-mat.mes-hall"],"primary_cat":"quant-ph","authors_text":"Andrew J. Fisher, Christian W. Binder, Guido Burkard, Jack J. Turner","submitted_at":"2025-12-03T14:53:12Z","abstract_excerpt":"Extensive theoretical and experimental work has established high-fidelity electron shuttling in Si/SiGe systems, whereas demonstrations in Si/SiO2 (SiMOS) remain at an early stage. To help address this, we perform full 3D simulations of conveyor-belt charge shuttling in a realistic SiMOS device, building on earlier 2D modelling. We solve the Poisson and time-dependent Schrodinger equations for varying shuttling speeds and gate voltages, focusing on potential pitfalls of typical SiMOS devices such as oxide-interface roughness, gate fabrication imperfections, and charge defects along the transpo"},"claims":{"count":4,"items":[{"kind":"strongest_claim","text":"Increasing the confinement restores conveyor-belt operation, which we find to be robust against interface roughness, gate misalignment, and charge defects buried in the oxide. However, our results indicate that defects located at the Si/SiO2-interface can induce considerable orbital excitation. For lower conveyor gate biases, positive defects in the transport channel can even capture passing electrons.","source":"verdict.strongest_claim","status":"machine_extracted","claim_id":"C1","attestation":"unclaimed"},{"kind":"weakest_assumption","text":"The 3D numerical solutions to the Poisson and time-dependent Schrödinger equations, together with the chosen models of roughness and defects, accurately represent real SiMOS device behavior without significant discretization or modeling errors.","source":"verdict.weakest_assumption","status":"machine_extracted","claim_id":"C2","attestation":"unclaimed"},{"kind":"one_line_summary","text":"3D simulations show that high confinement restores robust conveyor-belt shuttling in SiMOS devices despite roughness and buried defects, but Si/SiO2 interface defects cause orbital excitation and can trap electrons at low biases.","source":"verdict.one_line_summary","status":"machine_extracted","claim_id":"C3","attestation":"unclaimed"},{"kind":"headline","text":"Raising confinement in SiMOS devices restores reliable conveyor-belt electron shuttling despite fabrication imperfections.","source":"verdict.pith_extraction.headline","status":"machine_extracted","claim_id":"C4","attestation":"unclaimed"}],"snapshot_sha256":"bf12667289fef9852fd7a287eb19012bce7e4df00ec8c0640ca9cd8fb9625100"},"source":{"id":"2512.03853","kind":"arxiv","version":3},"verdict":{"id":"4977ba66-011c-4075-89d4-2eeaab4ca0cf","model_set":{"reader":"grok-4.3"},"created_at":"2026-05-17T02:16:25.385970Z","strongest_claim":"Increasing the confinement restores conveyor-belt operation, which we find to be robust against interface roughness, gate misalignment, and charge defects buried in the oxide. However, our results indicate that defects located at the Si/SiO2-interface can induce considerable orbital excitation. For lower conveyor gate biases, positive defects in the transport channel can even capture passing electrons.","one_line_summary":"3D simulations show that high confinement restores robust conveyor-belt shuttling in SiMOS devices despite roughness and buried defects, but Si/SiO2 interface defects cause orbital excitation and can trap electrons at low biases.","pipeline_version":"pith-pipeline@v0.9.0","weakest_assumption":"The 3D numerical solutions to the Poisson and time-dependent Schrödinger equations, together with the chosen models of roughness and defects, accurately represent real SiMOS device behavior without significant discretization or modeling errors.","pith_extraction_headline":"Raising confinement in SiMOS devices restores reliable conveyor-belt electron shuttling despite fabrication imperfections."},"integrity":{"clean":true,"summary":{"advisory":0,"critical":0,"by_detector":{},"informational":0},"endpoint":"/pith/2512.03853/integrity.json","findings":[],"available":true,"detectors_run":[],"snapshot_sha256":"c28c3603d3b5d939e8dc4c7e95fa8dfce3d595e45f758748cecf8e644a296938"},"references":{"count":0,"sample":[],"resolved_work":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57","internal_anchors":0},"formal_canon":{"evidence_count":2,"snapshot_sha256":"6c7f2eb47aa71b8d8d8d0ba6733174ce504c056fb2b71a03c5e928bed9745481"},"author_claims":{"count":0,"strong_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"builder_version":"pith-number-builder-2026-05-17-v1"}