{"paper":{"title":"Effect of N interstitial complexes on the electronic properties of GaAs$_{1-x}$N$_{x}$ alloys from first principles","license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","headline":"","cross_cats":[],"primary_cat":"cond-mat.mtrl-sci","authors_text":"C.I. Ventura, J.D. Fuhr, J.D. Querales-Flores","submitted_at":"2018-08-06T22:34:40Z","abstract_excerpt":"Several approaches have been used to investigate the impact of Nitrogen (N) on the electronic structure of GaAs$_{1-x}$N$_{x}$ alloys, however, there is no agreement between theory and experiments about the importance of the different N interstitial defects in these alloys, and their nature is still unknown. Here we analyze the impact of five different N defects on the electronic structure of GaAs$_{1-x}$N$_{x}$ alloys, using density-functional methods: we calculate electronic states, formation energies and charge transition levels. The studied defects include N$_{As}$, As$_{Ga}$, As$_{Ga}$-N$"},"claims":{"count":0,"items":[],"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"source":{"id":"1808.02142","kind":"arxiv","version":3},"verdict":{"id":null,"model_set":{},"created_at":null,"strongest_claim":"","one_line_summary":"","pipeline_version":null,"weakest_assumption":"","pith_extraction_headline":""},"references":{"count":0,"sample":[],"resolved_work":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57","internal_anchors":0},"formal_canon":{"evidence_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"author_claims":{"count":0,"strong_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"builder_version":"pith-number-builder-2026-05-17-v1"}