{"paper":{"title":"Negative Capacitance Ion-Sensitive Field-Effect Transistors with improved current sensitivity","license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","headline":"","cross_cats":["physics.app-ph"],"primary_cat":"physics.ins-det","authors_text":"Adrian M. ionescu, Ali Saeidi, Francesco Bellando","submitted_at":"2019-06-26T12:40:41Z","abstract_excerpt":"Ion-Sensitive Field-Effect Transistors (ISFETs) form a wide-spread technology for sensing, thanks to their label-free detection and intrinsic CMOS compatibility. Their current sensitivity, {\\Delta}ID/ID, for a given {\\Delta}pH, however, is limited by the thermionic limit for the Subthreshold Slope (SS) of Metal-Oxide-Semiconductor Field-Effect Transistors(MOSFET) and by the Nernst limit. Obtaining ISFETs with a steep slope transfer characteristics is extremely challenging. In this paper we combine the merits of traditional ISFETs with the performance boosts offered by the insertion of a Negati"},"claims":{"count":0,"items":[],"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"source":{"id":"1906.11040","kind":"arxiv","version":1},"verdict":{"id":null,"model_set":{},"created_at":null,"strongest_claim":"","one_line_summary":"","pipeline_version":null,"weakest_assumption":"","pith_extraction_headline":""},"references":{"count":0,"sample":[],"resolved_work":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57","internal_anchors":0},"formal_canon":{"evidence_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"author_claims":{"count":0,"strong_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"builder_version":"pith-number-builder-2026-05-17-v1"}