{"paper":{"title":"Elastically Relaxed Free-standing Strained-Si Nanomembranes","license":"","headline":"","cross_cats":[],"primary_cat":"cond-mat.mes-hall","authors_text":"Don E. Savage, George Celler, Keith A. Slinker, Levente J. Klein, Mark A. Eriksson, Mark Friesen, Max G. Lagally, Michelle M. Roberts","submitted_at":"2006-06-15T17:20:26Z","abstract_excerpt":"Strain plays a critical role in the properties of materials. In silicon and silicon-germanium, strain provides a mechanism for control of both carrier mobility and band offsets. In materials integra-tion, strain is typically tuned through the use of dislocations and elemental composition. We demonstrate a versatile method to control strain, by fabricating membranes in which the final strain state is controlled by elastic strain sharing, i.e., without the formation of defects. We grow Si/SiGe layers on a substrate from which they can be released, forming nanomembranes. X-ray diffraction measure"},"claims":{"count":0,"items":[],"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"source":{"id":"cond-mat/0606423","kind":"arxiv","version":1},"verdict":{"id":null,"model_set":{},"created_at":null,"strongest_claim":"","one_line_summary":"","pipeline_version":null,"weakest_assumption":"","pith_extraction_headline":""},"references":{"count":0,"sample":[],"resolved_work":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57","internal_anchors":0},"formal_canon":{"evidence_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"author_claims":{"count":0,"strong_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"builder_version":"pith-number-builder-2026-05-17-v1"}