{"paper":{"title":"High-field electron transport in bulk ZnO","license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","headline":"","cross_cats":[],"primary_cat":"cond-mat.mtrl-sci","authors_text":"A. Matulionis, E. \\v{S}ermuk\\v{s}nis, H. Morko\\c{c}, J. Liberis, L. Ardaravi\\v{c}ius, M. Ramonas, M. Toporkov, \\\"U. \\\"Ozg\\\"ur, V. Avrutin","submitted_at":"2016-05-30T06:51:31Z","abstract_excerpt":"Current-voltage dependence is measured in (Ga,Sb)-doped ZnO up to 150 kV/cm electric fields. A channel temperature is controlled by applying relatively short (few ns) voltage pulses to two-terminal samples. The dependence of electron drift velocity on electron density ranging from 1.42$\\times$10$^{17}$ cm$^{-3}$ to 1.3$\\times$10$^{20}$ cm$^{-3}$ at a given electric field is deduced after estimation of the sample contact resistance and the Hall electron mobility. Manifestation of the highest electron drift velocity up to $\\sim$1.5$\\times$10$^{7}$ cm/s is estimated for electron density of 1.42$\\"},"claims":{"count":0,"items":[],"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"source":{"id":"1605.09117","kind":"arxiv","version":1},"verdict":{"id":null,"model_set":{},"created_at":null,"strongest_claim":"","one_line_summary":"","pipeline_version":null,"weakest_assumption":"","pith_extraction_headline":""},"references":{"count":0,"sample":[],"resolved_work":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57","internal_anchors":0},"formal_canon":{"evidence_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"author_claims":{"count":0,"strong_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"builder_version":"pith-number-builder-2026-05-17-v1"}