{"paper":{"title":"Efficiency analysis of betavoltaic elements","license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","headline":"","cross_cats":[],"primary_cat":"cond-mat.mtrl-sci","authors_text":"A.I. Shkrebtii, A.V. Sachenko, I.O. Sokolovskyi, M.R. Kulish, R.M. Korkishko, V.P. Kostylyov","submitted_at":"2014-12-25T14:11:25Z","abstract_excerpt":"The conversion of energy of electrons produced by a radioactive source into electricity in a Si and SiC $\\textit{p-n}$ junctions is modeled. The features of the generation function describing the electron-hole pair production by an electron flow and the emergence of a \"dead layer\" are discussed. The collection efficiency, $Q$, describing the rate of electron-hole pair production by incident beta particles, is calculated taking into account the presence of the \"dead layer\". It is shown that in the case of high-grade Si $\\textit{p-n}$ junctions, the collection efficiency, $Q$, of electron-hole p"},"claims":{"count":0,"items":[],"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"source":{"id":"1412.7826","kind":"arxiv","version":2},"verdict":{"id":null,"model_set":{},"created_at":null,"strongest_claim":"","one_line_summary":"","pipeline_version":null,"weakest_assumption":"","pith_extraction_headline":""},"references":{"count":0,"sample":[],"resolved_work":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57","internal_anchors":0},"formal_canon":{"evidence_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"author_claims":{"count":0,"strong_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"builder_version":"pith-number-builder-2026-05-17-v1"}