{"paper":{"title":"Shadow evaporation of epitaxial Al/Al2O3/Al tunnel junctions on sapphire utilizing an inorganic bilayer mask","license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","headline":"","cross_cats":["cond-mat.mtrl-sci"],"primary_cat":"cond-mat.supr-con","authors_text":"Mark A. Gouker, Paul B. Welander, Terence J. Weir, Vladimir Bolkhovsky, William D. Oliver","submitted_at":"2012-03-27T16:02:04Z","abstract_excerpt":"This letter describes a new inorganic shadow mask that has been employed for the evaporation of all-epitaxial Al/Al2O3/Al superconducting tunnel junctions. Organic resists that are commonly used for shadow masks and other lift-off processes are not compatible with ultra-high vacuum deposition systems, and they can break down at even moderately elevated temperatures. The inorganic mask described herein does not suffer these same shortcomings. It was fabricated from a Ge/Nb bilayer, comprising suspended Nb bridges supported by an undercut Ge sacrificial layer. Utilizing such a bilayer mask on C-"},"claims":{"count":0,"items":[],"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"source":{"id":"1203.6007","kind":"arxiv","version":1},"verdict":{"id":null,"model_set":{},"created_at":null,"strongest_claim":"","one_line_summary":"","pipeline_version":null,"weakest_assumption":"","pith_extraction_headline":""},"references":{"count":0,"sample":[],"resolved_work":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57","internal_anchors":0},"formal_canon":{"evidence_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"author_claims":{"count":0,"strong_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"builder_version":"pith-number-builder-2026-05-17-v1"}