{"paper":{"title":"Reverse epitaxy of Ge: ordered and facetted surface patterns","license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","headline":"","cross_cats":[],"primary_cat":"cond-mat.mes-hall","authors_text":"Adrian Keller, J\\\"urgen Fassbender, Manfred Helm, Stefan Facsko, Xin Ou","submitted_at":"2013-03-21T00:48:18Z","abstract_excerpt":"Normal incidence ion irradiation at elevated temperatures, when amorphization is prevented, induces novel nanoscale patterns of crystalline structures on elemental semiconductors by a reverse epitaxial growth mechanism: on Ge surfaces irradiation at temperatures above the recrystallization temperature of 250{\\deg}C leads to self-organized patterns of inverse pyramids. Checkerboard patterns with fourfold symmetry evolve on the Ge (100) surface, whereas on the Ge (111) surface, isotropic patterns with a sixfold symmetry emerge. After high fluence irradiations these patterns exhibit well develope"},"claims":{"count":0,"items":[],"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"source":{"id":"1303.5133","kind":"arxiv","version":1},"verdict":{"id":null,"model_set":{},"created_at":null,"strongest_claim":"","one_line_summary":"","pipeline_version":null,"weakest_assumption":"","pith_extraction_headline":""},"references":{"count":0,"sample":[],"resolved_work":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57","internal_anchors":0},"formal_canon":{"evidence_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"author_claims":{"count":0,"strong_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"builder_version":"pith-number-builder-2026-05-17-v1"}