{"paper":{"title":"Investigation of Ta2O5 as an alternative high \\k{appa} dielectric for InAlN/GaN MOS HEMT on Si","license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","headline":"","cross_cats":[],"primary_cat":"physics.app-ph","authors_text":"Anamika Singh Pratiyush, Digbijoy N. Nath, Himanshu kumar, Rangarajan Muralidharan, Sandeep Kumar, Sandeep Vura, Sudhiranjan Tripathy, Surani B. Dolmanan, Vanjari Sai Charan","submitted_at":"2018-06-08T17:48:02Z","abstract_excerpt":"We report on the demonstration and investigation of Ta2O5 as high-\\k{appa} dielectric for InAlN/GaN-MOS HEMT-on-Si. Ta2O5 of thickness 24 nm and dielectric constant ~ 30 was sputter deposited on InAlN/GaN HEMT and was investigated for different post deposition anneal conditions (PDA). The gate leakage was 16nA/mm at -15 V which was ~ 5 orders of magnitude lower compared to reference HEMT. The 2-dimensional electron gas (2DEG) density was found to vary with annealing temperature suggesting the presence of net charge at the Ta2O5/InAlN interface. Dispersion in the capacitance-voltage (C-V) chara"},"claims":{"count":0,"items":[],"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"source":{"id":"1806.03291","kind":"arxiv","version":1},"verdict":{"id":null,"model_set":{},"created_at":null,"strongest_claim":"","one_line_summary":"","pipeline_version":null,"weakest_assumption":"","pith_extraction_headline":""},"references":{"count":0,"sample":[],"resolved_work":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57","internal_anchors":0},"formal_canon":{"evidence_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"author_claims":{"count":0,"strong_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"builder_version":"pith-number-builder-2026-05-17-v1"}