{"paper":{"title":"Advances in single crystal growth and annealing treatment of electron-doped HTSC","license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","headline":"","cross_cats":["cond-mat.supr-con"],"primary_cat":"cond-mat.mtrl-sci","authors_text":"Andreas Erb, Mark Kartsovnik, Michael Lambacher, Toni Helm","submitted_at":"2010-08-12T11:09:41Z","abstract_excerpt":"High quality electron-doped HTSC single crystals of $\\rm Pr_{2-x}Ce_{x}CuO_{4+\\delta}$ and $\\rm Nd_{2-x}Ce_{x}CuO_{4+\\delta}$ have been successfully grown by the container-free traveling solvent floating zone technique. The optimally doped $\\rm Pr_{2-x}Ce_{x}CuO_{4+\\delta}$ and $\\rm Nd_{2-x}Ce_{x}CuO_{4+\\delta}$ crystals have transition temperatures $T_{\\rm c}$ of $25$\\,K and $23.5$\\,K, respectively, with a transition width of less than $1$\\,K. We found a strong dependence of the optimal growth parameters on the Ce content $x$. We discuss the optimization of the post-growth annealing treatment"},"claims":{"count":0,"items":[],"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"source":{"id":"1008.2092","kind":"arxiv","version":2},"verdict":{"id":null,"model_set":{},"created_at":null,"strongest_claim":"","one_line_summary":"","pipeline_version":null,"weakest_assumption":"","pith_extraction_headline":""},"references":{"count":0,"sample":[],"resolved_work":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57","internal_anchors":0},"formal_canon":{"evidence_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"author_claims":{"count":0,"strong_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"builder_version":"pith-number-builder-2026-05-17-v1"}