{"paper":{"title":"Microscopic Origin of Charged Impurity Scattering and Flicker Noise in MoS2 field-effect Transistors","license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","headline":"","cross_cats":[],"primary_cat":"cond-mat.mes-hall","authors_text":"Arindam Ghosh, D. D. Sarma, Manish Jain, Subhamoy Ghatak, Sumanta Mukherjee","submitted_at":"2014-03-13T17:20:16Z","abstract_excerpt":"Scattering of charge carriers and flicker noise in electrical transport are the central performance limiting factors in electronic devices, but their microscopic origin in molybdenum disulphide~(MoS$_2$)-based field effect transistors remains poorly understood. Here, we show that both carrier scattering and low-frequency $1/f$ noise in mechanically exfoliated ultra-thin MoS$_2$ layers are determined by the localized trap states located within the MoS$_2$ channel itself. The trap states not only act as Coulomb scattering centers that determine transport in both equilibrium ($eV< k_BT$) and non-"},"claims":{"count":0,"items":[],"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"source":{"id":"1403.3333","kind":"arxiv","version":1},"verdict":{"id":null,"model_set":{},"created_at":null,"strongest_claim":"","one_line_summary":"","pipeline_version":null,"weakest_assumption":"","pith_extraction_headline":""},"references":{"count":0,"sample":[],"resolved_work":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57","internal_anchors":0},"formal_canon":{"evidence_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"author_claims":{"count":0,"strong_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"builder_version":"pith-number-builder-2026-05-17-v1"}