{"paper":{"title":"Ultrafast Switching in Terahertz Metamaterials using Ion Implanted Silicon on Sapphire","license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","headline":"","cross_cats":[],"primary_cat":"physics.optics","authors_text":"Abul K. Azad, Antoinette J. Taylor, Dibakar Roy Chowdhury, Ranjan Singh","submitted_at":"2014-07-10T07:27:45Z","abstract_excerpt":"We demonstrate ultrafast resonance switching of terahertz metamaterials through optical excitation of radiation damaged silicon placed in the gap of single split gap ring resonator. We observe the dynamic switching OFF of the fundamental resonance mode on a time scale of 4 picoseconds (ps) followed by the switching ON of the same resonance after 20 ps. Electric field distributions in the metamaterials unit cell derived through numerical simulations clearly support our experimental observations, showing that the high electric field at the resonator gaps, responsible for inductive-capacitive res"},"claims":{"count":0,"items":[],"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"source":{"id":"1407.2715","kind":"arxiv","version":1},"verdict":{"id":null,"model_set":{},"created_at":null,"strongest_claim":"","one_line_summary":"","pipeline_version":null,"weakest_assumption":"","pith_extraction_headline":""},"references":{"count":0,"sample":[],"resolved_work":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57","internal_anchors":0},"formal_canon":{"evidence_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"author_claims":{"count":0,"strong_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"builder_version":"pith-number-builder-2026-05-17-v1"}