{"paper":{"title":"Enhanced and continuous electrostatic carrier doping on the SrTiO$_{3}$ surface","license":"http://creativecommons.org/licenses/by/3.0/","headline":"","cross_cats":["cond-mat.mes-hall","cond-mat.str-el"],"primary_cat":"cond-mat.mtrl-sci","authors_text":"Azar B. Eyvazov, Christos Panagopoulos, Isao H. Inoue, Marcelo J. Rozenberg, Pablo Stoliar","submitted_at":"2013-05-07T08:52:43Z","abstract_excerpt":"Paraelectrical tuning of a charge carrier density as high as 10$^{13}$\\,cm$^{-2}$ in the presence of a high electronic carrier mobility on the delicate surfaces of correlated oxides, is a key to the technological breakthrough of a field effect transistor (FET) utilising the metal-nonmetal transition. Here we introduce the Parylene-C/Ta$_{2}$O$_{5}$ hybrid gate insulator and fabricate FET devices on single-crystalline SrTiO$_{3}$, which has been regarded as a bedrock material for oxide electronics. The gate insulator accumulates up to $\\sim10^{13}$cm$^{-2}$ carriers, while the field-effect mobi"},"claims":{"count":0,"items":[],"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"source":{"id":"1305.1440","kind":"arxiv","version":1},"verdict":{"id":null,"model_set":{},"created_at":null,"strongest_claim":"","one_line_summary":"","pipeline_version":null,"weakest_assumption":"","pith_extraction_headline":""},"references":{"count":0,"sample":[],"resolved_work":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57","internal_anchors":0},"formal_canon":{"evidence_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"author_claims":{"count":0,"strong_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"builder_version":"pith-number-builder-2026-05-17-v1"}