{"paper":{"title":"Unusual pattern formation on Si(100) due to low energy ion bombardment","license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","headline":"","cross_cats":["cond-mat.mtrl-sci"],"primary_cat":"cond-mat.mes-hall","authors_text":"Harapur, India), India (2) Bhubaneswar Institute of Technology, Jyoti Ranjan Mohanty (2), Sachivalaya Marg, Tanmoy Basu (1), T. Som (1)((1) Institute of Physics","submitted_at":"2012-02-24T07:13:01Z","abstract_excerpt":"In this paper evolution of silicon surface topography, under low energy ion bombardment, is investigated at higher oblique incident angles in the range of 63\\degree-83\\degree. Si(100) substrates were exposed to 500 eV argon ions. Different surface morphology evolves with increasing angle of incidence. Parallel-mode ripples are observed up to 67\\degree which undergo a transition to perpendicular-mode ripples at 80\\degree. However, this transition is not a sharp one but undergoes a series of unusual pattern formation at intermediate angles. Complete smoothening of silicon surface is observed at "},"claims":{"count":0,"items":[],"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"source":{"id":"1202.5381","kind":"arxiv","version":1},"verdict":{"id":null,"model_set":{},"created_at":null,"strongest_claim":"","one_line_summary":"","pipeline_version":null,"weakest_assumption":"","pith_extraction_headline":""},"references":{"count":0,"sample":[],"resolved_work":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57","internal_anchors":0},"formal_canon":{"evidence_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"author_claims":{"count":0,"strong_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"builder_version":"pith-number-builder-2026-05-17-v1"}