{"paper":{"title":"Observation of weak temperature dependence of spin diffusion length in highly-doped Si by using a non-local 3-terminal method","license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","headline":"","cross_cats":[],"primary_cat":"cond-mat.mtrl-sci","authors_text":"E. Shikoh, M. Kameno, M. Shiraishi, T. Oikawa, T. Sasaki, T. Suzuki, Y. Suzuki","submitted_at":"2011-10-19T05:33:35Z","abstract_excerpt":"We conduct an experimental investigation of temperature dependence of spin diffusion length in highly-doped n-type silicon by using a non-local 3-terminal method. Whereas an effect of spin drift is not ignorable to bias- and temperature-dependence of spin signals in non-metallic systems except for the case of a non-local 4-terminal method, it is not fully conclusive how the spin drift affects spin transport properties in highly-doped Si in a non-local 3-terminal method that is often used in Si spintronics. Here, we report on temperature dependence of spin diffusion length in the Si, and it is "},"claims":{"count":0,"items":[],"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"source":{"id":"1110.4187","kind":"arxiv","version":2},"verdict":{"id":null,"model_set":{},"created_at":null,"strongest_claim":"","one_line_summary":"","pipeline_version":null,"weakest_assumption":"","pith_extraction_headline":""},"references":{"count":0,"sample":[],"resolved_work":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57","internal_anchors":0},"formal_canon":{"evidence_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"author_claims":{"count":0,"strong_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"builder_version":"pith-number-builder-2026-05-17-v1"}