{"paper":{"title":"Structural phase control of (La$_{1.48}$Nd$_{0.40}$Sr$_{0.12}$)CuO$_4$ thin films by epitaxial growth technique","license":"","headline":"","cross_cats":["cond-mat.str-el"],"primary_cat":"cond-mat.supr-con","authors_text":"I. Tsukada","submitted_at":"2001-09-05T00:29:49Z","abstract_excerpt":"Epitaxial growth of (La$_{1.48}$Nd$_{0.40}$Sr$_{0.12}$)CuO$_4$ thin films was studied by pulsed-laser deposition technique on three different substrates, SrTiO$_3$ (100), LaSrAlO$_4$ (001), and YAlO$_3$ (001). The (Nd,Sr,Ce)$_2$CuO$_4$-type structure appears at the initial growth stage on SrTiO$_3$ (100) when the film is deposited under the growth conditions optimized for (La,Sr)$_2$CuO$_4$. This (Nd,Sr,Ce)$_2$CuO$_4$-type structure can be eliminated by increasing the substrate temperature and the laser repetition frequency. Films on LaSrAlO$_4$ (001) maintain a La$_2$CuO$_4$-type structure as"},"claims":{"count":0,"items":[],"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"source":{"id":"cond-mat/0109069","kind":"arxiv","version":1},"verdict":{"id":null,"model_set":{},"created_at":null,"strongest_claim":"","one_line_summary":"","pipeline_version":null,"weakest_assumption":"","pith_extraction_headline":""},"references":{"count":0,"sample":[],"resolved_work":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57","internal_anchors":0},"formal_canon":{"evidence_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"author_claims":{"count":0,"strong_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"builder_version":"pith-number-builder-2026-05-17-v1"}