{"paper":{"title":"Simulations of electron channeling in bent silicon crystal","license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","headline":"","cross_cats":[],"primary_cat":"physics.acc-ph","authors_text":"A V Korol, A V Solov'yov, G B Sushko, R G Polozkov, V G Bezchastnov, V K Ivanov, Walter Greiner","submitted_at":"2013-07-25T15:12:40Z","abstract_excerpt":"We report on the results of theoretical simulations of the electron channeling in a bent silicon crystal. The dynamics of ultra-relativistic electrons in the crystal is computed using the newly developed part [1] of the MBN Explorer package [2,3], which simulates classical trajectories of in a crystalline medium by integrating the relativistic equations of motion with account for the interaction between the projectile and crystal atoms. A Monte Carlo approach is employed to sample the incoming electrons and to account for thermal vibrations of the crystal atoms. The electron channeling along S"},"claims":{"count":0,"items":[],"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"source":{"id":"1307.6777","kind":"arxiv","version":1},"verdict":{"id":null,"model_set":{},"created_at":null,"strongest_claim":"","one_line_summary":"","pipeline_version":null,"weakest_assumption":"","pith_extraction_headline":""},"references":{"count":0,"sample":[],"resolved_work":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57","internal_anchors":0},"formal_canon":{"evidence_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"author_claims":{"count":0,"strong_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"builder_version":"pith-number-builder-2026-05-17-v1"}