{"paper":{"title":"Evidence for semiconducting behavior with a narrow band gap of Bernal graphite","license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","headline":"","cross_cats":["cond-mat.supr-con"],"primary_cat":"cond-mat.mtrl-sci","authors_text":"J. Barzola-Quiquia, N. Garc\\'ia, P. Esquinazi, S. Dusari","submitted_at":"2011-06-02T14:22:29Z","abstract_excerpt":"We have studied the resistivity of a large number of highly oriented graphite samples with areas ranging from several mm$^2$ to a few $\\mu$m$^2$ and thickness from $\\sim 10 $nm to several tens of micrometers. The measured resistance can be explained by the parallel contribution of semiconducting graphene layers with low carrier density $< 10^9$ cm$^{-2}$ and the one from metallic-like internal interfaces. The results indicate that ideal graphite with Bernal stacking structure is a narrow-gap semiconductor with an energy gap $E_g \\sim 40 $meV."},"claims":{"count":0,"items":[],"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"source":{"id":"1106.0437","kind":"arxiv","version":3},"verdict":{"id":null,"model_set":{},"created_at":null,"strongest_claim":"","one_line_summary":"","pipeline_version":null,"weakest_assumption":"","pith_extraction_headline":""},"references":{"count":0,"sample":[],"resolved_work":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57","internal_anchors":0},"formal_canon":{"evidence_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"author_claims":{"count":0,"strong_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"builder_version":"pith-number-builder-2026-05-17-v1"}