{"paper":{"title":"Novel High Efficiency Quadruple Junction Solar Cell with Current Matching and Optimized Quantum Efficiency","license":"http://creativecommons.org/publicdomain/zero/1.0/","headline":"","cross_cats":[],"primary_cat":"physics.app-ph","authors_text":"Mohammad Jobayer Hossain","submitted_at":"2019-01-26T16:26:41Z","abstract_excerpt":"A high photon to electricity conversion efficiency of 47.2082% was achieved by a novel combination of In0.51Ga0.49P, GaAs, In0.24Ga0.76As and In0.19Ga0.81Sb subcell layers in a quadruple junction solar cell design. The electronic bandgap of these materials are 1.9 eV, 1.42 eV, 1.08 eV and 0.55 eV respectively. This novel III-V arrangement enables the cell to absorb photons from the ultraviolet to deep infrared wavelengths of the solar spectrum. After careful consideration of important semiconductor parameters such as thicknesses of emitter and base layers, doping concentrations, diffusion leng"},"claims":{"count":0,"items":[],"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"source":{"id":"1904.01108","kind":"arxiv","version":1},"verdict":{"id":null,"model_set":{},"created_at":null,"strongest_claim":"","one_line_summary":"","pipeline_version":null,"weakest_assumption":"","pith_extraction_headline":""},"references":{"count":0,"sample":[],"resolved_work":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57","internal_anchors":0},"formal_canon":{"evidence_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"author_claims":{"count":0,"strong_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"builder_version":"pith-number-builder-2026-05-17-v1"}