{"paper":{"title":"THz Generation and Detection on Dirac Fermions in Topological Insulators","license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","headline":"","cross_cats":["cond-mat.mtrl-sci"],"primary_cat":"cond-mat.mes-hall","authors_text":"C. C. Lee, C.-H. Chen, C.-M. Cheng, C. M. Tu, C. W. Luo, F. C. Chou, H. Berger, H. D. Yang, H.-J. Chen, H. J. Wang, J. Y. Juang, J.-Y. Lin, K.-D. Tsuei, K. H. Wu, M. C. Chiang, R. Sankar, S. A. Ku, T. Kobayashi, T. T. Yeh, W. C. Chu, W. Y. Tzeng","submitted_at":"2013-01-26T04:21:38Z","abstract_excerpt":"This study shows that a terahertz (THz) wave can be generated from the (001) surface of cleaved Bi$_{\\textrm{2}}$Se$_{\\textrm{3}}$ and Cu-doped Bi$_{\\textrm{2}}$Se$_{\\textrm{3}}$ single crystals using 800 nm femtosecond pulses. The generated THz power is strongly dependent on the carrier concentration of the crystals. An examination of the dependence reveals the two-channel free carrier absorption to which Dirac fermions are indispensable. Dirac fermions in Bi$_{\\textrm{2}}$Se$_{\\textrm{3}}$ are significantly better absorbers of THz radiation than bulk carriers at room temperature. Moreover, t"},"claims":{"count":0,"items":[],"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"source":{"id":"1302.1087","kind":"arxiv","version":1},"verdict":{"id":null,"model_set":{},"created_at":null,"strongest_claim":"","one_line_summary":"","pipeline_version":null,"weakest_assumption":"","pith_extraction_headline":""},"references":{"count":0,"sample":[],"resolved_work":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57","internal_anchors":0},"formal_canon":{"evidence_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"author_claims":{"count":0,"strong_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"builder_version":"pith-number-builder-2026-05-17-v1"}